A novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology

A novel hetero-material gate MOSFET intended for integration into the existing deep-submicron silicon technology is proposed and simulated. It is shown that by adding a layer of material with a larger workfunction to the source side of the gate, short-channel effects can be greatly suppressed without degrading the driving ability. The threshold voltage roll-off can be compensated and tuned by controlling the length of this second gate. The new structure has great potential in breaking the barrier of deep-suhmicron MOSFET's scaling beyond 0.1 /spl mu/m technologies.