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A C-switch cell for low-voltage and high-density SRAMs

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9 Author(s)
Kuriyama, H. ; ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan ; Ishigaki, Y. ; Fujii, Y. ; Maegawa, S.
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We propose a novel static random access memory (SRAM) cell named complementary-switch (C-switch) cell. The proposed SRAM cell features: (1) C-switch in which an n-channel bulk transistor and a p-channel TFT are combined in parallel; (2) single-bit-line architecture; (3) gate-all-around TFT (GAT) with large ON-current of μA order. With these three features, the proposed cell enjoys stability at 1.5 V and is 16% smaller in size than conventional cells. The C-switch cell is built with only a triple poly-Si and one metal process using 0.3 μm design rules

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Electron Devices, IEEE Transactions on  (Volume:45 ,  Issue: 12 )