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A 1-V multigigahertz RF mixer core in 0.5-μm CMOS

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1 Author(s)
HongMo Wang ; Wireless Res. Lab., AT&T Bell Labs., Murray Hill, NJ, USA

Mixing was realized in a four-terminal MOS transistor by applying radio-frequency and local oscillator (LO) signals to the front and back gates of the device. A mixer core so designed in a 0.5 μm CMOS process is able to operate with 1 V supply and less than 0.2 mW of power while having a conversion gain up to 10 GHz using 0 dBm LO. Measured results include: 6 dB gain, 9.6 dB noise figure, 10 dBm IIP3 at 2 GHz and 6 dB gain, 18 dB noise figure, and -2 dBm IIP3 at 7 GHz

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 12 )

Date of Publication:

Dec 1998

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