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Interface states in modulation-doped In0.52Al0.48 As/In0.53Ga0.47As heterostructures

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4 Author(s)
Won-Pyo Hong ; Center for High-Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA ; Oh, Jae‐Eung ; Bhattacharya, P.K. ; Tiwald, Thomas E.

Systematic admittance measurements have been performed on the heterojunction capacitor in In0.52Al0.48As/In0.53Ga0.47 As modulation-doped heterostructures and on bulk Si-doped In0.52Al0.48As Schottky diodes grown by molecular-beam epitaxy. From the frequency-dependent capacitance and conductance characteristics, the density of any traps at and/or near the interface and their corresponding time constants were calculated to be in the range of 1012-1013 cm-2 and 10 -7-10-6 s, respectively. Compared to AlGaAs/GaAs heterostructures, the In0.52Al0.48As/In0.53 Ga0.47As system was found to have a higher density of interface states. These results suggest that the interface quality of the In0.52Al0.48As/In0.53Ga0.47 As heterostructure is not as perfect as that in AlGaAs/GaAs. This may be largely due to a poorer interface resulting from lattice mismatch and growth front surface roughness, and alloy clustering causing a higher density of localized states in In0.52Al0.48As

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 10 )