Referenced Items are not available for this document.
In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:33
,
Issue:
12
)
Date of Publication: Dec 1998
- Page(s):
- 2074 - 2079
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 6114578
- Digital Object Identifier :
- 10.1109/4.735549
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1998
- Sponsored by :
- IEEE Solid-State Circuits Society
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