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RF circuit design aspects of spiral inductors on silicon

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5 Author(s)
Burghartz, J.N. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Edelstein, D.C. ; Soyuer, M. ; Ainspan, H.A.
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The design and optimization of spiral inductors on silicon substrates, the related layout issues in integrated circuits, and the effect of the inductor-Q an the performance of radio-frequency (RF) building blocks are discussed. Integrated spiral inductors with inductances of 0.5-100 nH and Q's up to 40 are shown to be feasible in very-large-scale-integration silicon technology. Circuit design aspects, such as a minimum inductor area, the cross talk between inductors, and the effect of a substrate contact on the inductor characteristics are addressed. Important RF building blocks, such as a bandpass filter, low-noise amplifier, and voltage-controlled oscillator are shown to benefit substantially from an improved inductor-Q

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:33 ,  Issue: 12 )