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Monolithic transformers and their application in a differential CMOS RF low-noise amplifier

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2 Author(s)
J. J. Zhou ; Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA ; D. J. Allstot

A 900 MHz low-noise amplifier (LNA) utilizing three monolithic transformers to implement on-chip tuning networks and requiring no external components has been integrated in 2.88 mm2 in a standard digital 0.6 μm CMOS process. A bias current reuse technique is employed to reduce power dissipation, and process-, voltage-, and temperature-tracking biasing techniques are used. At 900 MHz, the LNA dissipates 18 mW from a single 3 V power supply and provides 4.1 dB noise figure, 12.3 dB power gain, -33.0 dB reverse isolation, and an input 1-db compression level of -16 dBm. Analysis and modeling considerations for silicon-based monolithic transformers are presented, and it is shown that a monolithic transformer occupies less die area and provides a higher quality factor than two independent inductors with the same effective inductance in differential applications

Published in:

IEEE Journal of Solid-State Circuits  (Volume:33 ,  Issue: 12 )