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The refractive index near the fundamental absorption edge in AlxGa1-xAs ternary compound semiconductors

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2 Author(s)
Jensen, B. ; Dept. of Phys., Lowell Univ., MA, USA ; Jensen, W.D.

The real part of the complex refractive index is calculated for photon energies over the region from 1.2 to 1.8 eV for AlxGa 1-xAs compounds as a function of x. No singularity is predicted. Rather, a change in the functional form of the refractive index, n occurs as the photon energy passes through the bandgap energy, G, leading to a local maximum or, more accurately, a plateau region in n as a function of frequency, which is observed experimentally. The effect of a finite-spin orbit-splitting energy and the effect of higher conduction bands are included. Theoretical and experimental results are compared for AlxGa 1-xAs over a range of mole fractions from x=0 to x=0.198

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 1 )

Date of Publication:

Jan 1991

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