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Low-threshold continuous-wave operation of 2.38 /spl mu/m GaInAsSb/GaSb type-II quantum-well laser diodes

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9 Author(s)
Joullie, A. ; Centre d'Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Cuminal, Y. ; Baranov, A.N. ; Bec, D.
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Strained GaInAsSb/GaSb type-II multiquantum well ridge waveguide laser diodes have operated near 2.38 /spl mu/m in the continuous regime for the first time at 23/spl deg/C, with threshold current in the range 60-150 mA and CW output power of /spl sim/1 mW/facet.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998

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