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Monolithic integrated DFB laser with electroabsorption modulator by identical active layer structure composed of two different QW types

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4 Author(s)
Stegmuller, B. ; Corp. Technol., Siemens AG, Munich, Germany ; Schier, M. ; Kunkel, F. ; Rieger, J.

The first monolithic integration of a 1.55 /spl mu/m ridge waveguide DFB laser with an EA modulator using an identical active MOW-layer structure composed of two different QW types is reported. Minimum threshold currents of 17 mA, voltage swing <1.5 V for 10 dB extinction ratio and 2 Gbit/s modulation capability are obtained.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998

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