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Effects of quantum well recombination losses on the internal differential efficiency of multi-quantum-well lasers

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3 Author(s)
Piprek, J. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Abraham, P. ; Bowers, J.E.

Non-uniform carrier distribution in InGaAsP-InP multi-quantum-well (MQW) laser diodes is found to cause QW recombination losses to increase with rising injection current above threshold. These losses can have a larger effect on the internal differential efficiency than carrier leakage.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998

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