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InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers

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10 Author(s)
Watanabe, M. ; Semicond. Group, Toshiba Corp., Kawasaki, Japan ; Ito, Y. ; Shiozawa, W. ; Okada, M.
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685 nm InGaAlP window structure laser diodes have been obtained with a new Zn diffusion method utilizing highly Zn-doped GaAs layers as a Zn source. The method has some advantages and superior controllability.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998