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Highly reliable GaInAs/GaInP 0.98 /spl mu/m window laser

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4 Author(s)
Hashimoto, J.-I. ; Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan ; Ikoma, N. ; Murata, M. ; Katsuyama, T.

A GaInAs-GaInP 0.98 /spl mu/m window strained SQW laser was fabricated for the first time using a selective nitrogen ion implantation and a subsequent annealing. Remarkable tolerances to a catastrophic optical destruction (COD) and an internal degradation have been obtained.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998