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Microscopic simulation of InGaAsP diode laser performance

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5 Author(s)
Hybertsen, M.S. ; Bell Labs., Lucent Technol., Murray Hill, NJ, USA ; Alam, M.A. ; Baraff, G. ; Smith, K.
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We have developed a microscopic model for a semiconductor diode laser which includes the physical transport of carriers, the quantum processes associated with the quantum wells (capture and gain) and the photon modes, all self consistently as a function of the device bias. Detailed comparison to experiment for electrical and optical properties shows the reliability of the model. Simulation shows that in a conventional multi-quantum well active layer device, the carrier distribution among the wells can be quite non-uniform. We propose that this is the fundamental explanation for the dependence of high speed operation on p-doping.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998

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