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Tensile-strained GaAs/sub 1-y/P/sub y/-AlGaAs quantum well diode lasers emitting between 715 nm and 790 nm

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8 Author(s)
G. Erbert ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany ; F. Bugge ; A. Knauer ; J. Sebastian
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Tensile-strained GaAs/sub 1-y/P/sub y/ QWs in LOC-AlGaAs structures for high power lasers at wavelengths below 800 nm were studied. At 735 nm a threshold current density of 180 A/cm/sup 2/ and a wall plug efficiency of 50% at 1.8 W have been achieved.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998