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Temperature insensitive characteristics of 1.06 /spl mu/m strain-compensated single quantum well laser diodes (SQW-LDs)

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4 Author(s)
H. Asano ; Miyanodai Technol. Dev. Center, Fuji Photo Film Co. Ltd., Kanagawa, Japan ; M. Wada ; T. Fukunaga ; T. Hayakawa

Temperature insensitive characteristics have been demonstrated in single mode 1.06 μm InGaAs SQW-LDs with AlGaInP current blocking layer and GaAsP barrier layers which act as strain compensation and electron barriers.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998