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Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE

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11 Author(s)
Nabiev, R.F. ; Coherent Inc., Santa Clara, CA, USA ; Aarik, J. ; Asonen, H. ; Bournes, P.
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We report reliable 40 W bars and highly efficient (56%) single emitter 808 nm InGaAsP-GaAs quantum well lasers with Al-free active regions. We have demonstrated excellent performance characteristics of high power 808 nm single emitter lasers and bars with Al-free active region grown by solid source molecular beam epitaxy (SSMBE).

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998