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Lasing at 1.3 /spl mu/m in strained quantum well lasers on InGaAs ternary substrates

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6 Author(s)
Otsubo, K. ; RWCP, Fujitsu Labs. Ltd., Atsugi, Japan ; Nishijima, Y. ; Uchida, T. ; Shoji, H.
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The InGaAs ternary substrates with an indium composition of 0.31 and 1.3 /spl mu/m strained quantum well lasers on them have been obtained for the first time. The temperature sensitivity of slope efficiency is -0.007 dB/K.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998