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Optical gain properties of 1.3-/spl mu/m n-type modulation-doped MQW lasers for parallel optical interconnections

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6 Author(s)

We experimentally demonstrate, for the first time, that the transparent carrier density is reduced in the 1.3-μm n-type modulation-doped MQW laser. This reduction causes the decrease in threshold current and the increase in the slope efficiency.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998