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1.3 /spl mu/m InGaAsP/InP strained-layer MQW lasers fabricated by reactive ion etching and MOVPE regrowth with CH/sub 3/Cl addition

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9 Author(s)
T. Yamamoto ; Fujitsu Labs. Ltd., Atsugi, Japan ; H. Kobayashi ; T. Watanabe ; H. Shoji
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Using reactive ion etching and MOVPE regrowth with CH/sub 3/Cl addition, 1.3 /spl mu/m InGaAsP-InP BH lasers with excellent high temperature characteristics and uniformity were fabricated. A narrow-beam-divergence laser with tapered stripe width is also demonstrated.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998