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Highly reliable operation of high-power 0.98-/spl mu/m InGaAs/InGaAsP lasers with a window structure fabricated by Si implantation

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4 Author(s)
Sagawa, M. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Hiramoto, K. ; Kikawa, T. ; Tsuji, S.

We have developed 0.98-/spl mu/m InGaAs-InGaAsP lasers with a window structure fabricated by Si implantation. During testing at 240 mW, lasers showed stable operation with an estimated lifetime of more than 200,000 hours at 25/spl deg/C.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998