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40 mW, 100/spl deg/C maximum temperature operation of 655-nm band InGaP/InGaAlP strained multiple-quantum-well laser diodes

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9 Author(s)
Shimada, N. ; Semicond. Group, Toshiba Corp., Kawasaki, Japan ; Horiuchi, O. ; Gen-Ei, K. ; Tanaka, A.
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40 mW, 100/spl deg/C maximum temperature operations have been realized in 655-nm band InGaP-InGaAlP strained multiple quantum-well laser diodes. Fundamental-transverse-mode operations up to 50 mW, high-frequency-modulation characteristics above 1 GHz, and furthermore, 70/spl deg/C, 30 mW stable operations over 1000 hours were demonstrated.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998