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Complex spectral behaviour of the waveguide modes in GaInN/GaN laser structures

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4 Author(s)
S. Heppel ; 4. Phys. Inst., Stuttgart Univ., Germany ; J. Off ; F. Scholz ; A. Hangleiter

We have investigated GaInN-GaN laser structures with regard to their waveguiding properties. Both experimental and theoretical studies revealed a highly complex mode behaviour, caused by the existence and the interplay between the several guided transverse modes, and dependent on the wavelength.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998