By Topic

Analysis of transverse modes of nitride-based laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Onomura, M. ; Adv. Semicond. Devices Res. Labs., Toshiba Corp., Kawasaki, Japan ; Saito, S. ; Sasanuma, K. ; Gen-Ichi Hatakoshi
more authors

The analysis of the perpendicular far field patterns of nitride-based laser diodes with various types of AlGaN cladding layers is demonstrated. Other results obtained with our nitride-based laser diodes are also demonstrated and discussed.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998