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Present status and prospects of blue light emitting semiconductor lasers

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1 Author(s)
S. Nakamura ; Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan

The InGaN multi-quantum-well-structure laser diodes grown on an epitaxially laterally overgrown GaN on sapphire had an output power as high as 420 mW per facet under RT-CW operation and a lifetime of 250 hours at a constant output power of 30 mW under CW operation at an ambient temperature of 50/spl deg/C.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998