Referenced Items are not available for this document.
An InGaAs/InAlAs double-heterojunction bipolar transistor (DHBT) on InP(n) grown by molecular-beam epitaxy (MBE) that exhibits high DC performance is discussed. An n/sup +/-InAs emitter cap layer was used for nonalloyed contacts in the structure and specific contact resistances of 1.8*10/sup -7/ and 6.0*10/sup -6/ Omega -cm/sup 2/ were measured for the nonalloyed emitter and base contacts, respectively. Since no high-temperature annealing is necessary, excellent contact surface morphology on thinner base devices can easily be obtained. In devices with 50*50- mu m/sup 2/ emitter area, common-emitter current gains as high as 1500 were achieved at a collector current density of 2.7*10/sup 3/ A/cm/sup 2/. The current gain increased up to 2000 for alloyed devices.<
Published in:
Electron Device Letters, IEEE
(Volume:9
,
Issue:
7
)
Date of Publication: July 1988
- Page(s):
- 331 - 333
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3233369
- Digital Object Identifier :
- 10.1109/55.734
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1988
- Sponsored by :
- IEEE Electron Devices Society
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