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Model of electron field emission from Si through SiO2

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4 Author(s)
Filip, V. ; Dept. of Environ. Technol., Nagoya Inst. of Technol., Japan ; Nicolaescu, D. ; Okuyama, F. ; Itoh, J.

The field electron emission from Si occurring through a SiO2 layer is considered. The applied electric field may produce electron accumulations near the emitting site and a reduction of the effective emitting surface area. The effect is stimulated by the oxide thickness increase

Published in:

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International  (Volume:2 )

Date of Conference:

6-10 Oct 1998