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Planar Schottky diodes for submillimeter wave applications

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7 Author(s)
Chih-I Lin ; Inst. fur Hochfrequenztech., Univ. of Technol., Darmstadt, Germany ; Simon, A. ; Rodriguez-Girones, M. ; Hartnagel, H.L.
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The main limitation of whisker-contacted diode technology is that no integration is possible. Therefore, the development of competitive planar Schottky barrier diodes has been put forward in the last decade. The quasi-vertical planar Schottky diode was proposed several years ago and the necessary technologies are developed for a reliable fabrication. We show the recent status of this type of planar Schottky diodes. At 200 GHz an output power of 5 mW (12.5% efficiency) has been achieved with a quasi-vertical planar varactor diode. Recent activities concentrate on anti-parallel Schottky mixer diodes and integration of diodes (0.8 μm anode diameter) with several receiver components. These diodes offer characteristics comparable to substrateless diodes with the same diode parameters

Published in:

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Date of Conference:

3-4 Sep 1998

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