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Residual gases investigation for eliminating contamination in LPCVD Si3N4 process

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7 Author(s)
Zhang, N. ; MiCRUS, Hopewell Junction, NY, USA ; Magloczki, G. ; Aumick, S. ; Chiusano, G.
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Although Si3N4 films in integrated circuit (IC) fabrication have almost 30 years of history, process engineers still face the challenge of meeting ever-tighter process control requirements, essentially for particle contamination. This paper presents the benefits of implementing an in-situ RGA technique, including reduction of NH4Cl or SixNyCl z condensation and improvement of tool availability

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Date of Conference:

23-25 Sep 1998