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Effects of process parameters on particle formation in SiH4 -N2O PECVD and WF6 CVD processes

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5 Author(s)
Z. Wu ; Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA ; S. Nijhawan ; S. A. Campbell ; N. Rao
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Particle beam mass spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO2 from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF6. In all cases, the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Date of Conference:

23-25 Sep 1998