By Topic

A novel trench-injector power device with low ON resistance and high switching speed

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
D. K. Y. Liu ; Center for Integrated Circuits, Stanford Univ., CA, USA ; J. D. Plummer

A power MOSFET device structure that has been developed to optimize the tradeoff between ON resistance and switching speed is discussed. The device structure features a trench injector that injects a controlled quantity of minority carriers into the drift path of the MOSFET current to modulate the conductivity of the device during the ON state. The conductivity-modulated MOSFET device (CMDMOS) has been fabricated and characterized. The device structure has demonstrated low ON resistance and high switching speed. It can be implemented along with logic circuitry to allow programmable electrical control of the switching-speed/ON-resistance tradeoff.<>

Published in:

IEEE Electron Device Letters  (Volume:9 ,  Issue: 7 )