Cart (Loading....) | Create Account
Close category search window
 

The other transistor: early history of the metal-oxide semiconductor field-effect transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

The silicon metal-oxide-semiconductor field-effect transistor (MOSFET or MOS transistor) did not become significant commercially until two decades after the 1948 announcement of the invention of the transistor by Bell Laboratories. The underlying concept of the MOSFET-modulation of conductivity in a semiconductor triode structure by a transverse electric field-first appeared in a 1928 patent application. It was confirmed experimentally in 1948. However early devices were not practical due to surface problems. Although these were solved at Bell Laboratories in 1958, Bell remained committed to earlier transistor technology. Development of the `other transistor' was first pursued elsewhere. It was finally the needs of computers and the opportunities created by integrated circuits that made the silicon MOSFET the basic element of late 20th-century digital electronics

Published in:

Engineering Science and Education Journal  (Volume:7 ,  Issue: 5 )

Date of Publication:

Oct 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.