Referenced Items are not available for this document.
Well-thickness dependence of temperature characteristics of 1.3-/spl mu/m AlGaInAs-InP strained-multiple-quantum-well lasers was investigated. Higher characteristic temperatures of threshold current density were obtained for thicker wells up to 6 nm. Fabricated ridge-waveguide lasers with 6-nm-thick wells exhibited characteristic temperature of as high as 125 K. Relaxation-oscillation frequency reduced by only 13% between 25/spl deg/C and 85/spl deg/C.
Published in:
Photonics Technology Letters, IEEE
(Volume:10
,
Issue:
12
)
Date of Publication: Dec. 1998
- Page(s):
- 1703 - 1705
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 6109405
- Digital Object Identifier :
- 10.1109/68.730475
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec. 1998
- Sponsored by :
- IEEE Photonics Society
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