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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:10 Issue:12 Help

Single-transverse mode and stable-polarization operation under high-speed modulation of InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

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6 Author(s)
Nishiyama, N. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan ; Mizutani, A. ; Hatori, N. ; Arai, M.
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We have demonstrated an oxide confinement vertical-cavity surface-emitting laser grown on a GaAs (311)B substrate, and achieved single-transverse mode and single-polarization operation in the entire tested current range. The threshold was 0.6 mA for a 2.7 /spl mu/m/spl times/2.9 /spl mu/m oxide aperture. Even under high-speed modulation up to 5 GHz, the device showed stable single-transverse mode and polarization. Sidemode suppression ratio and orthogonal polarization suppression ratio were over 30 and 10 dB, respectively.

Published in:
Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 12 )

Date of Publication: Dec. 1998

Page(s):
1676 - 1678
ISSN :
1041-1135
INSPEC Accession Number:
6109398
Digital Object Identifier :
10.1109/68.730466
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec. 1998
Sponsored by :
IEEE Photonics Society

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