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2d-modeling of exclusion effect in the base of semiconductor device

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3 Author(s)
Malyutenko, V. ; Inst. of Semicond., Kiev, Ukraine ; Borblik, V. ; Klimov, A.

By means of direct numerical solution of 2-dimensional transport equations an influence of surface generation-recombination on exclusion effect is investigated. Both nonsymmetric p+- and symmetric p+πp+-structures are considered. Generation of added carriers at the side surfaces of π-base moderates noticeably exclusion effect and increases current value. As a result of transversal inhomogeneity of the voltage drop across reverse biased p +π-junction the peaks of electric field appear near the junction

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998