Referenced Items are not available for this document.
The properties of nitrogen-doped amorphous SiC films irradiated by pulsed electron beams are presented. The I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates were investigated. The results showed that the film conductivity increased by about two orders of magnitude as nitrogen fraction was increased from 10 at% to 14 at%. The film conductivity was enhanced by about one order of magnitude as a result of two-fold increase of pulsed electron beam irradiation
Published in:
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Date of Conference: 5-7 Oct 1998
- Page(s):
- 179 - 182
- Meeting Date :
- 05 Oct 1998-07 Oct 1998
- Print ISBN:
- 0-7803-4909-1
- INSPEC Accession Number:
- 6258935
- Conference Location :
- Smolenice Castle
- Digital Object Identifier :
- 10.1109/ASDAM.1998.730193
- Product Type:
- Conference Publications
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