Referenced Items are not available for this document.
Nickel oxide (NiO) thin films were prepared on Si substrates by dc reactive magnetron sputtering from a nickel metal target in Ar+O2 with O2 content varied from 15 to 50%. The effects of the O2 gas content on the deposition rate, structure, composition and electrical properties were investigated. We have found that the good NiO stoichiometric films are obtainable with a polycrystalline structure and a resistivity of near 300 Ωcm at 25% oxygen content. But either the resistivity or the composition and structure suffer variations with the discharge parameters. Depending on the oxygen content, the deposited films have both amorphous and polycrystalline structures and the Ni/O ratio ranges between 0.71 and 1.02
Published in:
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Date of Conference: 5-7 Oct 1998
- Page(s):
- 175 - 178
- Meeting Date :
- 05 Oct 1998-07 Oct 1998
- Print ISBN:
- 0-7803-4909-1
- INSPEC Accession Number:
- 6258934
- Conference Location :
- Smolenice Castle
- Digital Object Identifier :
- 10.1109/ASDAM.1998.730192
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
