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Modeling and simulation of surface generation-recombination in Schottky diodes

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3 Author(s)
Drobny, V. ; Slovak Univ. of Technol., Bratislava, Slovakia ; Racko, J. ; Donoval, D.

The properties of the metal-semiconductor interface, which plays a dominant role in the charge transport through Schottky structures, are still not understood satisfactorily. The extraction of parameters from the measured I-V characteristics based on the classical thermionic emission-diffusion theory usually fails, especially at lower temperatures. We present a new more complex physical model which includes also the effects of surface generation-recombination and tunneling of free carriers via surface deep traps. Then the correlation of simulation experimental I-V characteristic is obtained in a much wider range of applied voltages and temperatures

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998

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