Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Al-DyxOy-n-InP (100) structure preparation and properties

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Babushkina, N.V. ; Inst. of Electron., Acad. of Sci., Minsk, Byelorussia ; Malyshev, S.A. ; Romanova, L.I.

Al-DyxOy-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy xOy films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O2 environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350°C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-DyxOy(I)-n-InP structure Ebr is 2.5×106 V/cm, the effective positive surface charge Qss is ~3×1011 cm-2 and the surface state density Nit is 5×1011 cm-2 eV-1. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-DyxOy (II)-n-InP structure has surface charge magnitude Qss about ±1×1011 cm-2 surface state density Nit~1×10 11 cm-2 eV-1, ionic type hysteresis 1-3 V and Ebr~5×106

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998