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Processing and characterization of GaAs surface-barrier heterostructures with texturized interface

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4 Author(s)
Borkovskaya, O.Yu. ; Inst. of Phys. of Semicond., Acad. of Sci., Kiev, Ukraine ; Dmitruk, N.L. ; Mamontova, I.B. ; Mamykin, S.V.

The possibility to control photosensitivity of Au(ITO)/GaAs surface-barrier heterostructure by evaporated processing including texturation and passivation of interface on investigated. The complex method of their characteristic is proposed that included analysis of optical, electrical and photoelectric characteristics of structure. The obtained results allowed to determine the change of optical and recombination parameters of interface caused by investigated processing

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998