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Resistivity anisotropy and surface morphology in ordered Inx Ga1-xP grown at 640°C

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5 Author(s)
Novak, J. ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; Hasen, S. ; Cambel, V. ; Kudela, R.
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We have studied the resistivity anisotropy of ordered Inx Ga1-xP epitaxial layers grown at 640°C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998

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