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Derived distribution for electrical overstress failure thresholds of transistors

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2 Author(s)
W. P. Wheless ; Dept. of Electr. & Comput. Eng., Alabama Univ., Tuscaloosa, AL, USA ; L. T. Wurtz

Electrical overstress failure may be analysed as a manifestation of plasma instabilities in semiconductors. The alternative Wunsch-Bell thermal paradigm is also useful for practical failure modelling, and is the basis for the derivation of the new probability density function presented

Published in:

Electronics Letters  (Volume:34 ,  Issue: 21 )