By Topic

40 Gbit/s 1.55 μm pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
V. Hurm ; Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany ; W. Benz ; W. Bronner ; A. Hulsmann
more authors

A 36.5 GHz bandwidth, 1.55 μm wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3 in GaAs substrate using a 0.15 μm gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated

Published in:

Electronics Letters  (Volume:34 ,  Issue: 21 )