Referenced Items are not available for this document.
A 36.5 GHz bandwidth, 1.55 μm wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3 in GaAs substrate using a 0.15 μm gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated
Published in:
Electronics Letters
(Volume:34
,
Issue:
21
)
Date of Publication: 15 Oct 1998
- Page(s):
- 2060 - 2062
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 6078217
- Digital Object Identifier :
- 10.1049/el:19981376
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 15 Oct 1998
- Sponsored by :
- Institution of Engineering and Technology
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