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High temperature operation of II-IV ridge-waveguide laser diodes

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7 Author(s)
Legge, M. ; Tech. Phys., Wurzburg Univ., Germany ; Bader, S. ; Bacher, G. ; Lugauer, H.-J.
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Ridge-waveguide laser diodes based on beryllium chalcogenides have been realised. An extremely large temperature coefficient (T0=330 K at room temperature) allows device operation up to temperatures of 413 K. Lateral monomode emission is obtained with a ratio between the vertical and the lateral far field pattern of, for example, 1.2:1 for a stripe width of 1 μm

Published in:

Electronics Letters  (Volume:34 ,  Issue: 21 )

Date of Publication:

15 Oct 1998

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