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Statistical simulation of MOSFETs using TCAD: meshing noise problem and selection of factors

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6 Author(s)
Shigyo, N. ; Toshiba Corp., Yokohama, Japan ; Tanimoto, H. ; Morishita, T. ; Sugawara, K.
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The parametric yield strongly depends on statistical process fluctuations. Statistical simulation is thus needed for a robust design of process, device and circuit. This article describes the statistical simulation of MOSFETs using technology CAD (TCAD). We used this approach to solve the so-called meshing noise problem caused by discretization in process/device simulation. Also, we propose a new selection method of the factors for obtaining BSIM3v3 worst-case models based on principal component analysis (PCA)

Published in:

Statistical Metrology, 1998. 3rd International Workshop on

Date of Conference:

7 Jun 1998