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Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate

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4 Author(s)
WeiQuan Zhang ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong ; Chan, M. ; Fung, S.K.H. ; Ko, P.K.

The performance of a photodetector fabricated using a standard CMOS process on SOI substrate has been studied. The photodetector is basically a floating gate SOI NMOSFET operating in the lateral bipolar mode. The depletion region induced by the floating gate separates the optically generated electron-hole pairs in the direction perpendicular to the current. This results in an extra current amplification beyond that of a normal lateral bipolar transistor. A high responsivity of 289 A/W has been measured with an operating voltage as low as 0.1 V. The impacts of technology scaling on the performance of the photodetector are also studied.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 11 )