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A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs

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5 Author(s)

We present a new simple three-terminal technique for measuring the on-state breakdown voltage in HEMTs. The gate current extraction technique involves grounding the source, and extracting a constant current from the gate. The drain current is then ramped from the off-state to the on-state, and the locus of drain voltage is measured. This locus of drain current versus drain voltage provides a simple, unambiguous definition of the on-state breakdown voltage which is consistent with the accepted definition of off-state breakdown. The technique is relatively safe and repeatable so that temperature dependent measurements of on-state breakdown can be carried out. This helps illuminate the physics of both off-state and on-state breakdown.

Published in:

Electron Device Letters, IEEE  (Volume:19 ,  Issue: 11 )

Date of Publication:

Nov. 1998

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