Referenced Items are not available for this document.
A four-level metal interconnect strategy designed specifically for an advanced 0.5-μm BiCMOS technology is described. Unique features of the new technology include: (a) the use of a nonetchback spin on polymer, hydrogen silsesquioxane (HSQ), for planarization and for lower capacitance of the interlayer dielectric, (b) low-temperature polycrystalline silicon planarization by HSQ, (c) a thick fourth layer of metal for high quality spiral inductors, (d) a low cost chemical vapor tungsten deposition followed by sputtered hot aluminum for greater process simplicity and reliability by eliminating the tungsten etchback step, and (e) a preventive high refractive index, “silicon-rich” glass for device protection from the interconnect processes
Published in:
Semiconductor Manufacturing, IEEE Transactions on
(Volume:11
,
Issue:
4
)
Date of Publication: Nov 1998
- Page(s):
- 624 - 635
- ISSN :
- 0894-6507
- INSPEC Accession Number:
- 6100989
- Digital Object Identifier :
- 10.1109/66.728560
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1998
- Sponsored by :
- IEEE Components, Packaging and Manufacturing Technology Society
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