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The effect of surface roughness on the radiative properties of patterned silicon wafers

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3 Author(s)
J. P. Hebb ; Dept. of Mech. Eng., MIT, Cambridge, MA, USA ; K. F. Jensen ; J. Thomas

The radiative properties of patterned silicon wafers have a major impact on the two critical issues in rapid thermal processing (RTP), namely wafer temperature uniformity and wafer temperature measurement. The surface topography variation of the die area caused by patterning and the roughness of the wafer backside can have a significant effect on the radiative properties, but these effects are not well characterized. We report measurements of room temperature reflectance of a memory die, logic die, and various multilayered wafer backsides. The surface roughness of the die areas and wafer backsides is characterized using atomic force microscopy (AFM). These data are subsequently used to assess the effectiveness of thin film optics in providing approximations for the radiative properties of patterned wafers for RTP applications

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:11 ,  Issue: 4 )